field-effect transistor

1. Aiming at the shortcoming of the typical field-effect transistor ( FET) switch, this paper proposes a kind of novel FET switch.
   针对典型场效应管开关电路的缺点，提出了一种新的场效应管开关。
2. A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
   方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
3. Expression of CaR in Rat Uterus Silver Ion-sensitive Field-Effect Transistor Sensor with Longevity Life
   钙离子敏感受体在大鼠子宫中的表达长寿命银离子敏感场效应晶体管传感器
4. The failure mechanism and device mechanics of ferroelectric thin film field-effect transistor memory
   铁电薄膜场效应晶体管存储器件的失效机制及器件力学
5. A new photo detector-bipolar photo gate field-effect transistor for CMOS image sensor is presented and its analytical model is also established.
   提出了一种用于CMOS图像传感器的新结构光电探测器件&双极光栅场效应晶体管。
6. A new ultra-wideband ( UWB) Gaussian pulse generator composed of a step recovery diode ( SRD), a field-effect transistor ( FET) and a Schottky diode was developed.
   设计了一种超宽带高斯脉冲的脉冲发生器，此脉冲发生器主要由阶跃恢复二极管，FET管和肖特基二极管组成。
7. The enzyme field-effect transistor ( ENFET) biosensor based on horseradish peroxidase ( HRP)-loaded meso-porous silica ( MS) particles for detecting H_2O_2 concentration was fabricated.
   基于负载辣根过氧化氢酶（HRP）的介孔二氧化硅（MS）粒子的酶场效应晶体管（ENFET）用来检测过氧化氢浓度的生物传感器已经被制得。
8. The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor
   栅压对有机薄膜场效应晶体管中载流子注入的影响
9. Silver Ion-sensitive Field-Effect Transistor Sensor with Longevity Life
   长寿命银离子敏感场效应晶体管传感器
10. Neurochip is a new technology of studying the electrical activities of nerve cells and advanced functions of brain, such as learning and memory by combining with field-effect transistor technique.
    神经芯片技术是一种将神经元或脑组织与场效应晶体管技术结合起来研究神经元电活动和大脑学习记忆等高级功能的新技术。
11. At the same time, the processes of SiC field-effect transistor is studied and the fabrication processes suitable to SiC MOSFET are developed.. 4H-SJC MOSFET device is fabricated.
    同时，研究了SiC场效应晶体管的制作工艺，初步得到了一套制造SiCMOSFET器件的制造工艺流程，研制出了4H-SiCMOSFET器件。
12. The paper deals with the quantitative equation of parameter of structure and techniques with the highest frequency and the gain of DG& MOSFET'S systematically derived from the silicon equivalent circuit of dual-gate MOS field-effect transistor ( DG-MOSFET'S).
    本文是通过硅双栅MOS场效应晶体管（简写为DG-MOSFET'S）的等效电路，系统的推导出DG-MOSFET'S的最高工作频率和增益与结构和工艺参数的定量关系式，指出提高频率和增益的具体办法。
13. Organic Thin-film Field-effect Transistor, Light-emitting and Display-driving
    有机薄膜场效应晶体管、发光和显示驱动
14. The characteristic of noise is studied for dual-gate MOS field-effect transistor ( DG& MOSFET'S) in this paper.
    本文是对双栅MOS场效应晶体管（简写为DG&MOSFET'S）噪声特性的研究。
15. This paper designed an analog multiplication that unaided to input and applying field-effect transistor.
    本文研究了一种设计条件独立于输入的，应用场效应管的改进型模拟乘法器。
16. According to the characteristics of tiny holes electrospark machining, a single micro-energy pulse power supply with self-adaptive control function, in which the large power field-effect transistor ( FET) is used as switch element, has been developed.
    根据电火花细微孔加工的工艺特点，研制了以大功率场效应管为开关器件的独立式适应控制微能脉冲电源。
17. A simulation study of metal-oxide-semiconductor field-effect transistor with Silicon-based Schottky Barrier contacts for source and drain ( SBSD-MOSFET) is presented in this paper.
    本文对硅基肖特基源漏MOSFET（简称SBSD-MOSFET）进行模拟研究。
18. The Characteristics of Noise of Silicon Dual-Gate MOS Field-Effect Transistor
    硅双栅MOS场效应晶体管的噪声特性
19. The Technology and Research on Properties of Sic Field-Effect Transistor
    碳化硅场效应晶体管技术与特性研究
20. The Short Channel Effect of Dual-Gate MOS Field-Effect Transistor
    双栅MOS场效应晶体管的短沟道效应
21. Low voltage pentacene thin film field-effect transistor
    低电压并五苯薄膜场效应晶体管
22. Analysis and Fabrication of Light-emitting Field-effect Transistor Based on Pentacene
    并五苯场效应发光管机理分析与场效应管制作
23. Heterojunction field-effect transistor ( HFET) produced by AlGaN/ GaN, even without doping, has a very high density of two-dimensional electron gas ( 2DEG) due to its strong polarization effects in the hetero-junction interface.
    由其制作的AlGaN/GaN异质结场效应晶体管（HFET），即使没有经过掺杂，但由于其强的极化效应，在其异质结的界面处也有非常高密度的二维电子气（2DEG）。
24. The field-effect transistor ( FET) is an important member of the electronic family.
    场效应晶体管是电子元器件家族中的一个重要成员。
25. This paper adopts the methods of nanowire preparation, assembly, testing and analysis, using a single ZnO nanowires prepared by ZnO nanowire field-effect transistor ( FET).
    本文采用纳米线制备、组装、测试及分析方法，利用单根ZnO纳米线制备了ZnO纳米线场效应晶体管（FET）。
26. A novel SiC Schottky Barrier Source/ Drain Metal-Oxide-Semiconductor Field-Effect Transistor ( SiC SBSD-MOSFET) is proposed in this dissertation.
    本文提出了一种新型SiC金属氧化物半导体场效应晶体管（MOSFET）结构&SiC肖特基势垒源漏MOSFET。
27. High electron mobility transistors ( High Electron MobilityTransistor) as a field-effect transistor, have been widely used in communications, electronics and other fields, it has the characteristics of high-power, low-noise, high-frequency, high-speed.
    而高电子迁移率晶体管（HighElectronMobilityTransistor）作为场效应晶体管中的一种，也开始广泛应用于通信、电子等领域，它具有大功率、低噪声、高频、高速等特点。
28. Currently, researchers have already produced several silicon nanowire nano-electronic devices in the laboratory, such as field-effect transistor ( FET), single-electron detectors, single-electron memory devices, the two sides to electronic pumps.
    目前在实验室里已经制备出来了多种硅纳米线纳米电子器件，如场效应晶体管（FET）、单电子探测器、单电子存储元件、双方向电子泵等。
29. Currently, the development of graphene-based devices has just started and some prototype devices, such as field-effect transistor ( FET) have been developed, but for the systematic application of carbon-based circuits, more materials with rich properties and more functional devices are required.
    目前，基于机器烯的器件研究刚刚起步，虽然已经发展了场效应晶体管（FET）等一部分原型器件，但系统地发展碳基集成电路尚需要更多且性质更丰富的材料和器件。
30. As one of ferroelectric memories, ferroelectric field-effect transistor ( FeFET) has attracted considerable interests due to its simple unit structure, higher storage density, and obeying the scaling rule of ultralarge-scale-integration circuits.
    铁电场效应晶体管作为铁电存储器的一种，除了上述优点之外，还具有单元结构简单、存储密度更高和符合超大规模集成电路的按比例缩小定律等更多优点，引起了研究者的广泛关注。

noun

1. a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field

   Synonym:    FET